Semiconductor Physics And Devices

Author: Donald A. Neamen
Editor: McGraw-Hill Education
ISBN: 9780071089029
File Size: 66,47 MB
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Provides a basis for understanding the characteristics, operation, and limitations of semiconductor devices. This title deals with the electrical properties and characteristics of semiconductor materials and devices. It intends to bring together quantum mechanics, the quantum theory of solids, and semiconductor material physics.

Semiconductor Physics And Devices

Author: Donald Neamen
Editor: McGraw-Hill Education
ISBN: 9780073529585
File Size: 66,14 MB
Format: PDF
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With its strong pedagogy, superior readability, and thorough examination of the physics of semiconductor material, Semiconductor Physics and Devices, 4/e provides a basis for understanding the characteristics, operation, and limitations of semiconductor devices. Neamen's Semiconductor Physics and Devices deals with the electrical properties and characteristics of semiconductor materials and devices. The goal of this book is to bring together quantum mechanics, the quantum theory of solids, semiconductor material physics, and semiconductor device physics in a clear and understandable way.

Proceedings Of The Tenth International Workshop On The Physics Of Semiconductor Devices December 14 18 1999 New Delhi 2 2000

Author: International Workshop on the Physics of Semiconductor Devices
Editor: Allied Publishers
ISBN: 9788170239987
File Size: 69,78 MB
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Fundamentals Of Semiconductor Physics And Devices

Author:
Editor: World Scientific
ISBN: 9812384693
File Size: 56,35 MB
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This book is an introduction to the principles of semiconductor physics, linking its scientific aspects with practical applications. It is addressed to both readers who wish to learn semiconductor physics and those seeking to understand semiconductor devices. It is particularly well suited for those who want to do both.

Handbook Of Research On Nanoelectronic Sensor Modeling And Applications

Author: Ahmadi, Mohammad Taghi
Editor: IGI Global
ISBN: 152250737X
File Size: 37,29 MB
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Nanoelectronics are a diverse set of materials and devices that are so small that quantum mechanics need to be applied to their function. The possibilities these devices present outweigh the difficulties associated with their development, as biosensors and similar devices have the potential to vastly improve our technological reach. The Handbook of Research on Nanoelectronic Sensor Modeling and Applications begins with an introduction of the fundamental concepts of nanoelectronic sensors, then proceeds to outline in great detail the concepts of nanoscale device modeling and nanoquantum fundamentals. Recent advances in the field such as graphene technology are discussed at length in this comprehensive handbook, ideal for electrical engineers, advanced engineering students, researchers, and academics.

Basic Semiconductor Physics

Author: Chihiro Hamaguchi
Editor: Springer
ISBN: 3319668609
File Size: 54,61 MB
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The new edition of this textbook presents a detailed description of basic semiconductor physics. The text covers a wide range of important phenomena in semiconductors, from the simple to the advanced. Four different methods of energy band calculations in the full band region are explained: local empirical pseudopotential, non-local pseudopotential, KP perturbation and tight-binding methods. The effective mass approximation and electron motion in a periodic potential, Boltzmann transport equation and deformation potentials used for analysis of transport properties are discussed. Further, the book examines experiments and theoretical analyses of cyclotron resonance in detail. Optical and transport properties, magneto-transport, two-dimensional electron gas transport (HEMT and MOSFET) and quantum transport are reviewed, while optical transition, electron-phonon interaction and electron mobility are also addressed. Energy and electronic structure of a quantum dot (artificial atom) are explained with the help of Slater determinants. The physics of semiconductor lasers is also described, including Einstein coefficients, stimulated emission, spontaneous emission, laser gain, double heterostructures, blue lasers, optical confinement, laser modes, and strained quantum well lasers, offering insights into the physics of various kinds of semiconductor lasers. In this third edition, energy band calculations in full band zone with spin-orbit interaction are presented, showing all the matrix elements and equipping the reader to prepare computer programs of energy band calculations. The Luttinger Hamiltonian is discussed and used to analyze the valence band structure. Numerical calculations of scattering rate, relaxation time, and mobility are presented for typical semiconductors, which are very helpful for understanding of transport. Energy band structures and effective masses of nitrides such as GaN, InN, AlN and their ternary alloys are discussed because they are very important materials for the blue light emission, and high power devices with and high frequency. Learning and teaching with this textbook is supported by problems and solutions in the end of the chapters. The book is written for bachelor and upper undergraduate students of physics and engineering.

Esd

Author: Steven H. Voldman
Editor: John Wiley & Sons
ISBN: 0470012900
File Size: 27,77 MB
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This volume is the first in a series of three books addressing Electrostatic Discharge (ESD) physics, devices, circuits and design across the full range of integrated circuit technologies. ESD Physics and Devices provides a concise treatment of the ESD phenomenon and the physics of devices operating under ESD conditions. Voldman presents an accessible introduction to the field for engineers and researchers requiring a solid grounding in this important area. The book contains advanced CMOS, Silicon On Insulator, Silicon Germanium, and Silicon Germanium Carbon. In addition it also addresses ESD in advanced CMOS with discussions on shallow trench isolation (STI), Copper and Low K materials. Provides a clear understanding of ESD device physics and the fundamentals of ESD phenomena. Analyses the behaviour of semiconductor devices under ESD conditions. Addresses the growing awareness of the problems resulting from ESD phenomena in advanced integrated circuits. Covers ESD testing, failure criteria and scaling theory for CMOS, SOI (silicon on insulator), BiCMOS and BiCMOS SiGe (Silicon Germanium) technologies for the first time. Discusses the design and development implications of ESD in semiconductor technologies. An invaluable reference for EMC non-specialist engineers and researchers working in the fields of IC and transistor design. Also, suitable for researchers and advanced students in the fields of device/circuit modelling and semiconductor reliability.

Fundamentals Of Tunnel Field Effect Transistors

Author: Sneh Saurabh
Editor: CRC Press
ISBN: 1315350262
File Size: 26,85 MB
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During the last decade, there has been a great deal of interest in TFETs. To the best authors’ knowledge, no book on TFETs currently exists. The proposed book provides readers with fundamental understanding of the TFETs. It explains the interesting characteristics of the TFETs, pointing to their strengths and weaknesses, and describes the novel techniques that can be employed to overcome these weaknesses and improve their characteristics. Different tradeoffs that can be made in designing TFETs have also been highlighted. Further, the book provides simulation example files of TFETs that could be run using a commercial device simulator.

Metal Oxide Semiconductor Transistor Analysis

Author: Sukgi Choi
Editor:
ISBN:
File Size: 70,83 MB
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Nonlinear Dynamics And Pattern Formation In Semiconductors And Devices

Author: Franz-Josef Niedernostheide
Editor: Springer Science & Business Media
ISBN: 3642795064
File Size: 15,77 MB
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In Nonlinear Dynamics and Pattern Formation in Semiconductors and Devices the contributions of the International Conference on Nonlinear Dynamics and Pattern Formation in the Natural Environment (ICPF '94) in Noordwijkerhout, held by many internationally reknown experts, are compiled. To connect the field of semiconductor physics with the theory of nonequilibrium dissipative systems, the emphasis lies on the study of localized structures, their stability and bifurcation behaviour. A point of special interest is the evolution of dynamic structures and the investigation of more complex structures arising from interactions between these structures. Possible applications of nonlinear effects and self-organization phenomena with respect to signal processing are discussed.

Solid State Physics

Author: James Patterson
Editor: Springer Science & Business Media
ISBN: 9783642025891
File Size: 53,13 MB
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While the standard solid state topics are covered, the basic ones often have more detailed derivations than is customary (with an empasis on crystalline solids). Several recent topics are introduced, as are some subjects normally included only in condensed matter physics. Lattice vibrations, electrons, interactions, and spin effects (mostly in magnetism) are discussed the most comprehensively. Many problems are included whose level is from "fill in the steps" to long and challenging, and the text is equipped with references and several comments about experiments with figures and tables.

The Physics Of Submicron Semiconductor Devices Nato Asi Series Series B Physics Vol 180

Author: NATO Advanced Study Institute on Physics of Submicron Semiconductor Devices
Editor: Springer Science & Business Media
ISBN: 9780306429866
File Size: 45,68 MB
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The papers contained in the volume represent lectures delivered as a 1983 NATO ASI, held at Urbino, Italy. The lecture series was designed to identify the key submicron and ultrasubmicron device physics, transport, materials and contact issues. Nonequilibrium transport, quantum transport, interfacial and size constraints issues were also highlighted. The ASI was supported by NATO and the European Research Office. H. L. Grubin D. K. Ferry C. Jacoboni v CONTENTS MODELLING OF SUB-MICRON DEVICES.................. .......... 1 E. Constant BOLTZMANN TRANSPORT EQUATION... ... ...... .................... 33 K. Hess TRANSPORT AND MATERIAL CONSIDERATIONS FOR SUBMICRON DEVICES. . .. . . . . .. . . . .. . .. . .... ... .. . . . .. . . . .. . . . . . . . . . . 45 H. L. Grubin EPITAXIAL GROWTH FOR SUB MICRON STRUCTURES.................. 179 C. E. C. Wood INSULATOR/SEMICONDUCTOR INTERFACES.......................... 195 C. W. Wilms en THEORY OF THE ELECTRONIC STRUCTURE OF SEMICONDUCTOR SURFACES AND INTERFACES......................................... 223 C. Calandra DEEP LEVELS AT COMPOUND-SEMICONDUCTOR INTERFACES........... 253 W. Monch ENSEMBLE MONTE CARLO TECHNIqUES............................. 289 C. Jacoboni NOISE AND DIFFUSION IN SUBMICRON STRUCTURES................. 323 L. Reggiani SUPERLATTICES. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 361 . . . . . . . . . . . . K. Hess SUBMICRON LITHOGRAPHY 373 C. D. W. Wilkinson and S. P. Beaumont QUANTUM EFFECTS IN DEVICE STRUCTURES DUE TO SUBMICRON CONFINEMENT IN ONE DIMENSION.... ....................... 401 B. D. McCombe vii viii CONTENTS PHYSICS OF HETEROSTRUCTURES AND HETEROSTRUCTURE DEVICES..... 445 P. J. Price CORRELATION EFFECTS IN SHORT TIME, NONS TAT I ONARY TRANSPORT. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 477 . . . . . . . . . . . . J. J. Niez DEVICE-DEVICE INTERACTIONS............ ...................... 503 D. K. Ferry QUANTUM TRANSPORT AND THE WIGNER FUNCTION................... 521 G. J. Iafrate FAR INFRARED MEASUREMENTS OF VELOCITY OVERSHOOT AND HOT ELECTRON DYNAMICS IN SEMICONDUCTOR DEVICES............. 577 S. J. Allen, Jr.

Quantum Mechanics

Author: Paul Bracken
Editor: BoD – Books on Demand
ISBN: 183968044X
File Size: 23,48 MB
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Quantum mechanics touches all areas of physics, chemistry, life sciences, and engineering. It has emerged as a tool for researching and developing new technology that has had a deep impact on modern life. An essential ingredient of quantum mechanics is the role of the observer and the duality between particle and wave properties of matter at very small scales. This book covers such topics as complex space forms of quantum mechanics, entropy in quantum mechanics, and equations of relativistic quantum mechanics as well as applications of quantum mechanics to more complicated situations. Written by international experts, the book illustrates the wide scope, influence, and applicability of quantum mechanics.

Physics Of Semiconductor Devices

Author: Massimo Rudan
Editor: Springer
ISBN: 3319631543
File Size: 20,19 MB
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This textbook describes the basic physics of semiconductors, including the hierarchy of transport models, and connects the theory with the functioning of actual semiconductor devices. Details are worked out carefully and derived from the basic physical concepts, while keeping the internal coherence of the analysis and explaining the different levels of approximation. Coverage includes the main steps used in the fabrication process of integrated circuits: diffusion, thermal oxidation, epitaxy, and ion implantation. Examples are based on silicon due to its industrial importance. Several chapters are included that provide the reader with the quantum-mechanical concepts necessary for understanding the transport properties of crystals. The behavior of crystals incorporating a position-dependent impurity distribution is described, and the different hierarchical transport models for semiconductor devices are derived (from the Boltzmann transport equation to the hydrodynamic and drift-diffusion models). The transport models are then applied to a detailed description of the main semiconductor-device architectures (bipolar, MOS, CMOS), including a number of solid-state sensors. The final chapters are devoted to the measuring methods for semiconductor-device parameters, and to a brief illustration of the scaling rules and numerical methods applied to the design of semiconductor devices.

Analysis And Simulation Of Semiconductor Devices

Author: S. Selberherr
Editor: Springer Science & Business Media
ISBN: 3709187524
File Size: 62,10 MB
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The invention of semiconductor devices is a fairly recent one, considering classical time scales in human life. The bipolar transistor was announced in 1947, and the MOS transistor, in a practically usable manner, was demonstrated in 1960. From these beginnings the semiconductor device field has grown rapidly. The first integrated circuits, which contained just a few devices, became commercially available in the early 1960s. Immediately thereafter an evolution has taken place so that today, less than 25 years later, the manufacture of integrated circuits with over 400.000 devices per single chip is possible. Coincident with the growth in semiconductor device development, the literature concerning semiconductor device and technology issues has literally exploded. In the last decade about 50.000 papers have been published on these subjects. The advent of so called Very-Large-Scale-Integration (VLSI) has certainly revealed the need for a better understanding of basic device behavior. The miniaturization of the single transistor, which is the major prerequisite for VLSI, nearly led to a breakdown of the classical models of semiconductor devices.

Hot Electrons In Semiconductors

Author: N. Balkan
Editor: Oxford University Press on Demand
ISBN: 9780198500582
File Size: 24,58 MB
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Electrons in a semiconductor device pick up energy from the applied voltage or from the light that is incident on the device. They dissipate that energy by causing the semiconductor crystal lattice to vibrate more strongly. If the excess energy is given to the electrons at a faster rate than that lost to the lattice, however, the average energy and the temperature of the electrons increase very rapidly. They can become much hotter than the surrounding crystallattice. When this happens, the electron motion in the device changes its character; current no longer increases linearly with the applied voltage; it may saturate or in some cases may even decrease with increasing voltage. Ohms law breaks down completely. How this happens, and the impact of the phenomenonon current research in semiconductors and on the electronic and optoelectronic technology is the subject matter of this book.

Reference Data For Engineers

Author: Mac E. Van Valkenburg
Editor: Newnes
ISBN: 9780750672917
File Size: 57,61 MB
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Reference Data for Engineers is the most respected, reliable, and indispensable reference tool for technical professionals around the globe. Written by professionals for professionals, this book is a complete reference for engineers, covering a broad range of topics. It is the combined effort of 96 engineers, scientists, educators, and other recognized specialists in the fields of electronics, radio, computer, and communications technology. By providing an abundance of information on essential, need-to-know topics without heavy emphasis on complicated mathematics, Reference Data for Engineers is an absolute "must-have" for every engineer who requires comprehensive electrical, electronics, and communications data at his or her fingertips. Featured in the Ninth Edition is updated coverage on intellectual property and patents, probability and design, antennas, power electronics, rectifiers, power supplies, and properties of materials. Useful information on units, constants and conversion factors, active filter design, antennas, integrated circuits, surface acoustic wave design, and digital signal processing is also included. The Ninth Edition also offers new knowledge in the fields of satellite technology, space communication, microwave science, telecommunication, global positioning systems, frequency data, and radar. * Widely acclaimed as the most practical reference ever published for a wide range of electronics and computer professionals, from technicians through post-graduate engineers. * Provides a great way to learn or review the basics of various technologies, with a minimum of tables, equations, and other heavy math.

Polycrystalline Silicon Germanium Films For Integrated Microsystems

Author: Andrea Elke Franke
Editor:
ISBN:
File Size: 31,63 MB
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Cmos

Author: R. Jacob Baker
Editor: John Wiley & Sons
ISBN: 1119481554
File Size: 31,52 MB
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A revised guide to the theory and implementation of CMOS analog and digital IC design The fourth edition of CMOS: Circuit Design, Layout, and Simulation is an updated guide to the practical design of both analog and digital integrated circuits. The author—a noted expert on the topic—offers a contemporary review of a wide range of analog/digital circuit blocks including: phase-locked-loops, delta-sigma sensing circuits, voltage/current references, op-amps, the design of data converters, and switching power supplies. CMOS includes discussions that detail the trade-offs and considerations when designing at the transistor-level. The companion website contains numerous examples for many computer-aided design (CAD) tools. Using the website enables readers to recreate, modify, or simulate the design examples presented throughout the book. In addition, the author includes hundreds of end-of-chapter problems to enhance understanding of the content presented. This newly revised edition: • Provides in-depth coverage of both analog and digital transistor-level design techniques • Discusses the design of phase- and delay-locked loops, mixed-signal circuits, data converters, and circuit noise • Explores real-world process parameters, design rules, and layout examples • Contains a new chapter on Power Electronics Written for students in electrical and computer engineering and professionals in the field, the fourth edition of CMOS: Circuit Design, Layout, and Simulation is a practical guide to understanding analog and digital transistor-level design theory and techniques.

Fundamentals Of Industrial Electronics

Author: Bogdan M. Wilamowski
Editor: CRC Press
ISBN: 1439802807
File Size: 30,10 MB
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The Industrial Electronics Handbook, Second Edition combines traditional and newer, more specialized knowledge that will help industrial electronics engineers develop practical solutions for the design and implementation of high-power applications. Embracing the broad technological scope of the field, this collection explores fundamental areas, including analog and digital circuits, electronics, electromagnetic machines, signal processing, and industrial control and communications systems. It also facilitates the use of intelligent systems—such as neural networks, fuzzy systems, and evolutionary methods—in terms of a hierarchical structure that makes factory control and supervision more efficient by addressing the needs of all production components. Enhancing its value, this fully updated collection presents research and global trends as published in the IEEE Transactions on Industrial Electronics Journal, one of the largest and most respected publications in the field. Fundamentals of Industrial Electronics covers the essential areas that form the basis for the field. This volume presents the basic knowledge that can be applied to the other sections of the handbook. Topics covered include: Circuits and signals Devices Digital circuits Digital and analog signal processing Electromagnetics Other volumes in the set: Power Electronics and Motor Drives Control and Mechatronics Industrial Communication Systems Intelligent Systems